Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM
Document Type and Number:
Japanese Patent JP2020074367
Kind Code:
A
Abstract:
To provide a semiconductor device manufacturing method for improving characteristics of a barrier film formed on a substrate, a substrate processing apparatus, and a program.SOLUTION: A semiconductor device manufacturing method forms a film containing a metal element and another element and further containing at least one of nitrogen and carbon over the substrate by performing, a predetermined number of non-simultaneous cycles, a first step of supplying, from gas supply pipes 232a and 232b, a first source gas containing a metal element and a second source gas containing another element different from the metal element such that at least parts of the respective supply periods of the gases are overlapped with respect to the substrate 200 in a processing furnace 202, and a second step of supplying a reaction gas containing at least one of nitrogen and carbon to the substrate from the gas supply pipe 232c.SELECTED DRAWING: Figure 1
Inventors:
OGAWA ARITO
KIYONO ATSUO
KIYONO ATSUO
Application Number:
JP2019168287A
Publication Date:
May 14, 2020
Filing Date:
September 17, 2019
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP
International Classes:
H01L21/285; C23C16/34; C23C16/455; H01L21/28
Domestic Patent References:
| JP2002525432A | 2002-08-13 | |||
| JP2015200028A | 2015-11-12 | |||
| JP2007537360A | 2007-12-20 | |||
| JP2013151722A | 2013-08-08 | |||
| JP2015207591A | 2015-11-19 | |||
| JP2011097017A | 2011-05-12 |
Foreign References:
| US20160079070A1 | 2016-03-17 |
Attorney, Agent or Firm:
Fukuoka Masahiro
Aniya Setsuo
Aniya Setsuo