Title:
STACK TYPE III-V SEMICONDUCTOR DIODE
Document Type and Number:
Japanese Patent JP2020077894
Kind Code:
A
Abstract:
To provide a stack type III-V semiconductor diode.SOLUTION: A III-V semiconductor diode includes an nlayer having a dopant concentration of 10N/cmto 10N/cmand a layer thickness of 50 μm to 1,000 μm, a player having a dopant concentration of 5×10N/cmto 5×10N/cm, and an nlayer having a dopant concentration of at least 10N/cm, and the player, the nlayer, and the nlayer are monolithically formed, and each contain a GaAs compound, or each consist of a GaAs compound, and the dopant concentration of the nlayer has a first value on the first surface and has a second value on the second surface, the second value of the dopant concentration is at least 1.5 to 2.5 times greater than the first value.SELECTED DRAWING: Figure 1
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Inventors:
VOLKER DUDEK
Application Number:
JP2020028271A
Publication Date:
May 21, 2020
Filing Date:
February 21, 2020
Export Citation:
Assignee:
3 5 POWER ELECTRONICS GMBH
International Classes:
H01L29/861; H01L29/868
Domestic Patent References:
| JP2005079232A | 2005-03-24 | |||
| JPH06314801A | 1994-11-08 | |||
| JPH08316500A | 1996-11-29 | |||
| JPH06196724A | 1994-07-15 | |||
| JP2000164891A | 2000-06-16 | |||
| JPS61183915A | 1986-08-16 |
Other References:
A. KOEL, T. RANG AND G. RANG: "Characterization of the temperature dependent behavior of snappy phenomenon by the switching-off of", WIT TRANSACTIONS ON ENGINEERING SCIENCES, vol. 83, JPN6019048875, 2014, pages 439 - 449, ISSN: 0004491899
Attorney, Agent or Firm:
Einzel Felix-Reinhard
Morita Taku
Junichi Maekawa
Hiroyasu Ninomiya
Ueshima
Morita Taku
Junichi Maekawa
Hiroyasu Ninomiya
Ueshima