Title:
SEMICONDUCTOR FILM-FORMING METHOD AND FILM DEPOSITION APPARATUS
Document Type and Number:
Japanese Patent JP2020088175
Kind Code:
A
Abstract:
To provide a technique for forming a crystallized semiconductor film controlled in grain size without doping an impurity.SOLUTION: A semiconductor film-forming method according to an embodiment disclosed herein is a method for forming a crystallized semiconductor film having a desired grain size on a substrate. The method comprises the steps of: forming a seed layer on the substrate loaded in a process chamber; evacuating the process chamber in a state in which the substrate with the seed layer formed thereon still remains in the process chamber until the pressure in the process chamber reaches medium vacuum or a lower pressure; forming an amorphous semiconductor film on the seed layer after the evacuation of the process chamber; and crystallizing the amorphous semiconductor film by a thermal treatment.SELECTED DRAWING: Figure 2
Inventors:
KANEMURA RUI
KUMAGAI KEITA
FUJITA KEISUKE
KUMAGAI KEITA
FUJITA KEISUKE
Application Number:
JP2018220608A
Publication Date:
June 04, 2020
Filing Date:
November 26, 2018
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/205; H01L21/20
Domestic Patent References:
| JP2011171424A | 2011-09-01 | |||
| JPH08264440A | 1996-10-11 | |||
| JP2014127524A | 2014-07-07 | |||
| JP2013082986A | 2013-05-09 | |||
| JP2012004542A | 2012-01-05 |
Foreign References:
| US20110089429A1 | 2011-04-21 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito