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Title:
WAFER PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2020088177
Kind Code:
A
Abstract:
To provide a wafer processing method capable of easily detecting whether a mask layer covers a device.SOLUTION: A method for processing a wafer in which a device is formed in a plurality of regions partitioned by lattice-like division schedule lines comprises a mask layer coating step ST2, and a plasma processing step ST3. The mask layer coating step coats a mask layer coating the device and composed of a resin film of a prescribed color for exposing a division schedule line region on a surface of the wafer. The plasma processing step supplies an etching gas of a plasma state to the surface side of the wafer and etches division schedule lines exposed from the mask layer after the mask layer coating step ST2 is performed. The method further includes a mask layer detecting step ST4 which determines whether the mask layer exists on the surface of the wafer on the basis of whether a prescribed color is detected on the surface of the wafer after the plasma processing step ST3 is performed.SELECTED DRAWING: Figure 2

Inventors:
SANDO HIDEYUKI
KITAMURA HIROSHI
Application Number:
JP2018220652A
Publication Date:
June 04, 2020
Filing Date:
November 26, 2018
Export Citation:
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Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/301
Domestic Patent References:
JP2017103330A2017-06-08
JP2017028086A2017-02-02
JP2018073866A2018-05-10
JPH0620943A1994-01-28
JP2007019385A2007-01-25
Attorney, Agent or Firm:
Sakai International Patent Office