Title:
RE-IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS
Document Type and Number:
Japanese Patent JP2020107392
Kind Code:
A
Abstract:
To enable accurate re-implantation irrespective of a beam current value of an ion beam to be used.SOLUTION: When performing ion implantation by conveying a substrate in a first direction, an implantation resuming method comprises steps of: stopping an ion beam in response to an apparatus failure; resuming ion implantation by conveying the substrate in a second direction opposite to the first direction after conveying the substrate in a manner traversing an ion beam irradiation position if a beam current value at the time of the ion implantation exceeds a reference value; and resuming the ion implantation by conveying the substrate in the first direction after conveying the substrate in the second direction if the beam current value is equal to or lower than the reference value.SELECTED DRAWING: Figure 1
Inventors:
OKUTE YASUHIRO
Application Number:
JP2018242021A
Publication Date:
July 09, 2020
Filing Date:
December 26, 2018
Export Citation:
Assignee:
NISSIN ION EQUIPMENT CO LTD
International Classes:
H01J37/317; C23C14/48; H01L21/265