Title:
METHOD FOR GROWING LITHIUM NIOBATE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2020152628
Kind Code:
A
Abstract:
To provide a method capable of suppressing the occurrence of ridge poly crystallization to stably grow a high quality lithium niobate (LN) single crystal at a high single crystallization rate by the Czochralski (Cz) method.SOLUTION: A method for growing a LN single crystal by the Cz method, in which a seed crystal 1 is made to contact to a raw material melt in a crucible 12 having an inner diameter d while the seed crystal is rotated and pulled up to grow a crystal shoulder part and a subsequent crystal straight body part having a crystal diameter D, comprises: setting the pulling rate of the seed crystal to a range of 0-1 mm/H from starting to pull the seed crystal until the diameter of a crystal to be grown reaches the numerical value of a smaller one of (1/2)D or (1/3)d; setting the increase rate of crystal radius to a range of 5-20 mm/H; gradually increasing the pulling rate after the crystal diameter exceeds the numerical value; and setting the pulling rate to a range of 2-5 mm/H when the crystal diameter D of the crystal straight body part is growing .SELECTED DRAWING: Figure 1
Inventors:
KAJIGAYA TOMIO
Application Number:
JP2019108419A
Publication Date:
September 24, 2020
Filing Date:
June 11, 2019
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
C30B29/30; C30B15/20
Domestic Patent References:
| JP2008260663A | 2008-10-30 | |||
| JP2002145696A | 2002-05-22 |
Foreign References:
| CN103911662A | 2014-07-09 |
Attorney, Agent or Firm:
Akira Ueda
Masahiro Koizumi
Kamei Takeyuki
Masahiro Koizumi
Kamei Takeyuki