Title:
SILICON OXIDE FILM, MATERIAL FOR GAS BARRIER FILM, AND METHOD FOR MANUFACTURING SILICON OXIDE FILM
Document Type and Number:
Japanese Patent JP2021011631
Kind Code:
A
Abstract:
To provide a silicon oxide film that exhibits excellent gas barrier properties even as a thin film.SOLUTION: The silicon oxide film is characterized by satisfying the following conditions (1) and (2). (1) The water vapor transmission rate (WVTR) at a film thickness of 500 nm or less is at most 9.0×10-3 g/m2 day. (2) The carbon concentration in the film as measured by X-ray photoelectron spectroscopy (XPS) is at most 3.0 atom%.SELECTED DRAWING: None
Inventors:
SUGIMOTO SHUN
CHIBA YOICHI
TANAKA RYOJI
FUKAWA MARINA
CHIBA YOICHI
TANAKA RYOJI
FUKAWA MARINA
Application Number:
JP2020026878A
Publication Date:
February 04, 2021
Filing Date:
February 20, 2020
Export Citation:
Assignee:
TOSOH CORP
SAGAMI CHEM RES INST
SAGAMI CHEM RES INST
International Classes:
C23C16/42; B32B9/00; C07F7/18