Title:
ABRASIVE COMPOSITION, MANUFACTURING METHOD OF ABRASIVE COMPOSITION, POLISHING METHOD AND MANUFACTURING METHOD SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2021042343
Kind Code:
A
Abstract:
To provide an abrasive composition capable of polishing SiOC at a high polishing speed.SOLUTION: An abrasive composition comprising: colloidal silica; and a quaternary ammonium compound expressed by a quaternary ammonium cation in which one or two groups of R1 to R4 that are substituents of N is independently a first group that is an alkyl group having 3 or larger and 20 or smaller carbon atoms, an alkenyl group having 3 or larger and 20 or smaller carbon atoms or an aryl group having 6 to 20 carbon atoms, each of remaining three or two groups other than the first group of the R1 to R4 is independently a second group that is an alkyl group having one or two carbon atoms or an alkenyl group having two carbon atoms, and a monovalent anion, in which pH is smaller than 4.0, zeta potential of the colloidal silica is -60 mV or larger and -35 mV or smaller.SELECTED DRAWING: None
Inventors:
MAE RYOTA
ONISHI SHOGO
ONISHI SHOGO
Application Number:
JP2019167314A
Publication Date:
March 18, 2021
Filing Date:
September 13, 2019
Export Citation:
Assignee:
FUJIMI INC
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
Domestic Patent References:
| JP2009278061A | 2009-11-26 |
Foreign References:
| US20190211228A1 | 2019-07-11 | |||
| WO2016031485A1 | 2016-03-03 |
Attorney, Agent or Firm:
Hatta International Patent Corporation