Title:
PLASMA PROCESSING DEVICE AND METHOD FOR PROCESSING SUBSTRATE
Document Type and Number:
Japanese Patent JP2021044535
Kind Code:
A
Abstract:
To provide a plasma processing device which can suppress a processing speed from increasing locally in a center portion of a substrate.SOLUTION: A plasma processing device disclosed herein comprises: a chamber; a substrate supporting unit; a plasma generating unit; and first and second electromagnet assemblies. The substrate supporting unit is disposed in the chamber. The center of a substrate on the substrate supporting unit is located on a central axis of the chamber. The plasma generating unit generates plasma in the chamber. The first electromagnet assembly includes one or more first toroidal coils, is disposed on or above the chamber, and is configured to generate a first magnetic field in the chamber. The second electromagnet assembly includes one or more second toroidal coils, and is configured to generate a second magnetic field in the chamber. The second magnetic field lowers an intensity of the first magnetic field at the center of the substrate on the substrate supporting unit.SELECTED DRAWING: Figure 1
Inventors:
YOKOTA AKIHIRO
Application Number:
JP2020096205A
Publication Date:
March 18, 2021
Filing Date:
June 02, 2020
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065; H05H1/46
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Yoshiki Kuroki
Junji Kashiwaoka