Title:
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL WAFER AND SILICON CARBIDE SINGLE CRYSTAL INGOT
Document Type and Number:
Japanese Patent JP2021050112
Kind Code:
A
Abstract:
To provide a manufacturing method of a silicon carbide single crystal wafer capable of obtaining a high quality silicon carbide single crystal wafer; and to provide a silicon carbide single crystal wafer.SOLUTION: In a silicon carbide single crystal wafer manufactured by a gas growth method, a dislocation density contained in the wafer is 3500 pieces/cm2 or less, and in comparison between a center part of the wafer, an end part of the wafer and a middle part of the wafer, a different of KOH etch pit density is below 50% of a mean value.SELECTED DRAWING: None
Inventors:
KAMATA ISAO
TSUCHIDA SHUICHI
HOSHINO NORIHIRO
TOKUDA YUICHIRO
OKAMOTO TAKESHI
TSUCHIDA SHUICHI
HOSHINO NORIHIRO
TOKUDA YUICHIRO
OKAMOTO TAKESHI
Application Number:
JP2019173463A
Publication Date:
April 01, 2021
Filing Date:
September 24, 2019
Export Citation:
Assignee:
CENTRAL RES INST ELECTRIC POWER IND
DENSO CORP
DENSO CORP
International Classes:
C30B29/36; C23C16/42; C30B25/20
Domestic Patent References:
| JP2014028757A | 2014-02-13 | |||
| JP2016044081A | 2016-04-04 | |||
| JP2018186252A | 2018-11-22 | |||
| JP2018177591A | 2018-11-15 |
Foreign References:
| WO2016133172A1 | 2016-08-25 |
Attorney, Agent or Firm:
Hiroyuki Kurihara
Mountain Saki Yuichiro
Mountain Saki Yuichiro