Title:
SPUTTERING APPARATUS
Document Type and Number:
Japanese Patent JP2021063279
Kind Code:
A
Abstract:
To provide a sputtering apparatus capable of effectively suppressing an anode disappearance over a long time in a case where a dielectric film is deposited by sputtering a target.SOLUTION: A sputtering apparatus SM which includes a vacuum chamber 1 having a target 2 arranged therein and a sputtering power supply Ps for applying a predetermined power to the target deposits a dielectric film on a surface of a substrate Sw in the vacuum chamber by applying a power to the target to form a plasma atmosphere in the vacuum chamber and sputtering the target. A ring-shaped member 3 functioning as an anode in sputtering is arranged so as to surround a periphery of the target. The ring-shaped member is arranged such that an upper surface 30 thereof is positioned below a sputtering surface 2a of the target. A deposition preventing plate 6 with a floating potential is arranged around the target to cover a part of the upper surface of the ring-shaped member. Positive potential holding means is further included to hold a positive potential of the ring-shaped member.SELECTED DRAWING: Figure 1
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Inventors:
HARADA MANABU
ARAYA TAKUMA
FUJINAGA TETSUSHI
HOSODA IKUO
GOSHI YOSHITAKA
IKEDA SUSUMU
IWAI HARUNORI
ARAYA TAKUMA
FUJINAGA TETSUSHI
HOSODA IKUO
GOSHI YOSHITAKA
IKEDA SUSUMU
IWAI HARUNORI
Application Number:
JP2019189433A
Publication Date:
April 22, 2021
Filing Date:
October 16, 2019
Export Citation:
Assignee:
ULVAC CORP
International Classes:
C23C14/34
Domestic Patent References:
| JPH1024532A | 1998-01-27 | |||
| JPH10204629A | 1998-08-04 | |||
| JPH1136075A | 1999-02-09 |
Attorney, Agent or Firm:
Seiryu Corporation