Title:
SENSOR DEVICE, AND PRODUCTION METHOD OF SENSOR DEVICE
Document Type and Number:
Japanese Patent JP2021089148
Kind Code:
A
Abstract:
To provide a sensor device and a production method of the sensor device using a thin-film transistor with good stability against flexure and with excellent flexibility.SOLUTION: A sensor device comprises: a thin-film transistor including a gate electrode, a gate insulating film layer, a source electrode, a drain electrode, and a semiconductor layer on a substrate; an interlayer dielectric film and an upper electrode that are formed on the source electrode, the drain electrode, and the semiconductor between the thin-film transistor and an organic piezoelectric film; and an adhesive electrode layer that surrounds the upper electrode and is patterned on an area overlapped with the organic piezoelectric film.SELECTED DRAWING: Figure 1
Inventors:
HATTA KAORU
Application Number:
JP2019217821A
Publication Date:
June 10, 2021
Filing Date:
December 02, 2019
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD
International Classes:
G01L1/16; H01L21/336; H01L29/786; H01L41/113; H01L41/193