Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021141333
Kind Code:
A
Abstract:
To provide a display device which achieves high mobility and high reliability in a device using an oxide semiconductor.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming an oxide semiconductor layer having a crystalline region where a c-axis is oriented in a direction substantially perpendicular to a surface; forming an oxide insulation layer on the oxide semiconductor layer in contact with the oxide semiconductor layer; performing a third heat treatment to supply oxygen to the oxide semiconductor layer to form a hydrogen-containing nitride insulation layer on the oxide insulation layer; and performing a fourth heat treatment to supply hydrogen to an interface between at least the oxide semiconductor layer and the oxide insulation layer.SELECTED DRAWING: Figure 3
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP2021076941A
Publication Date:
September 16, 2021
Filing Date:
April 29, 2021
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; G02F1/1368; G09F9/30; H01L21/8234; H01L21/8239; H01L21/8242; H01L27/088; H01L27/105; H01L27/108; H01L27/1156
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