Title:
IMAGE SENSOR STRUCTURE AND METHOD OF FORMING THE SAME
Document Type and Number:
Japanese Patent JP2023160728
Kind Code:
A
Abstract:
To provide an image sensor which significantly reduces dark current, and to provide a method of forming the same.SOLUTION: A method includes the steps of; forming a deep well 204 in a substrate 202 of a workpiece 200; forming a first injection region 206 extending partially through the substrate and reaching the deep well; forming a highly n-doped region 208 in the first injection region; etching a cavity in the substrate such that a portion of the cavity is directly above the deep well 204; forming a second injection region 218 between a lower surface of the cavity and the deep well; forming an interface injection region 222 along a surface of the cavity; forming a germanium layer 224 in the cavity; forming a cap layer 226 on the germanium layer; forming a highly p-doped region 228 in the germanium layer through the cap layer; forming a dielectric layer 230 on the workpiece; and forming a contact feature in the dielectric layer to couple to the highly n-doped region and the highly p-doped region.SELECTED DRAWING: Figure 10
Inventors:
HSU MING-CHIEH
JIANG SIN-YI
HUANG CHEN SUNG-WEN
LIAO YING-KAI
LIN JUNG-I
CHU YI-SHIN
HUANG KUAN-CHIEH
JIANG SIN-YI
HUANG CHEN SUNG-WEN
LIAO YING-KAI
LIN JUNG-I
CHU YI-SHIN
HUANG KUAN-CHIEH
Application Number:
JP2023020399A
Publication Date:
November 02, 2023
Filing Date:
February 14, 2023
Export Citation:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTUARING CO LTD
International Classes:
H01L27/146; H01L31/10
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Yusuke Yamaguchi
Mitsutsugu Sugimura
Yusuke Yamaguchi