Title:
【発明の名称】液晶用薄膜トランジスタの製造方法
Document Type and Number:
Japanese Patent JP2501153
Kind Code:
B2
Abstract:
The method is for providing a crystal thin film transistor of a plane structure and for simplifying the process. The liquid crystal thin film transistor comprises: a gate electrode(2) formed on a glass substrate(1); the first anode oxidized film(3a) which is formed around the gate electrode(2), being contacted with the gate electrode(2); and the second anode oxidized film(3b) formed on the first anode oxidized film(3a) and on the gate electrode(2), with a plane surface.
Inventors:
CHO JINSHOKU
YAMAMURA NOBUYUKI
YAMAMURA NOBUYUKI
Application Number:
JP28476191A
Publication Date:
May 29, 1996
Filing Date:
October 30, 1991
Export Citation:
Assignee:
SANSEI ELECTRONICS CORP
International Classes:
G02F1/1343; G02F1/136; G02F1/1368; H01L21/336; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L29/786; G02F1/1343; G02F1/136; H01L21/336; H01L27/12
Domestic Patent References:
| JP2272430A | ||||
| JP1252937A |
Attorney, Agent or Firm:
Kobori Masashi
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