Title:
【発明の名称】半導体回路装置の製造方法
Document Type and Number:
Japanese Patent JP2514291
Kind Code:
B2
Abstract:
A structure for bonding to a conductive pad on a semiconductor substrate is described. The structure comprises a glassy passivating layer with a thickness of at least 3 microns deposited over the conductive pad. The passivating layer defines an aperture which exposes a portion of the conductive pad. A metal bump covers the portion of the conductive pad exposed in the aperture and further extends over the edges of the glassy passivating layer so as to form a seal between the conductive pad and the glassy passivating layer. A subsequent thermal compression bonding operation on such structure does not cause fractures in the glassy passivating layer due to its thickness.
Inventors:
DASU GOBINDA
BYUU TOOMASU ERU
BAANDERUMAIAA ERITSUKU
BYUU TOOMASU ERU
BAANDERUMAIAA ERITSUKU
Application Number:
JP50087991A
Publication Date:
July 10, 1996
Filing Date:
November 21, 1990
Export Citation:
Assignee:
INTAANASHONARU BIJINESU MASHIINZU CORP
International Classes:
H01L21/60; H01L21/603; H01L23/485; (IPC1-7): H01L21/321
Domestic Patent References:
| JP5578549A | ||||
| JP6345826A |
Attorney, Agent or Firm:
Koichi Tonmiya (1 person outside)
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