Title:
【発明の名称】磁気抵抗素子
Document Type and Number:
Japanese Patent JP2546921
Kind Code:
B2
Abstract:
PURPOSE:To give temperature stability and make it possible to use at a high temperature by doping Si as donor atoms into part of an InAs thin film grown on a monocrystalline substrate of GaAs. CONSTITUTION:An InAs thin film having two layers of electron mobility portion comprises a high electron mobility portion 1, 11 and a low electron mobility portions 1, 12 of film, has electrodes 2a and 2b for external connection and short-bar-shaped electrodes 3 made of a high conductive material and is equipped with a monocrystalline substrate 4 and a magnetism--sensing portion 5 of a magnetoresistance element. The InAs thin film having two layers of electron mobility portion comprising the magnetism-sensing portion 5 of the magnetoresistance element is doped with donor atoms in its high electron mobility portion 1, 11 and has a high conductivity compared to the low electron mobility portion 1, 12. The InAs thin film forming the magnetism-sensing portion is desired to have the thickness of less than 1.0mum for the whole area. Also, Si, S and Ge can be considered as the donor atom to be used for the InAs. The substrate 4 adopted is a monocrystalline substrate used for ordinary elements, and sapphire and silicon are used together with GaAs and InP.
Inventors:
SHIBAZAKI ICHIRO
Application Number:
JP30620790A
Publication Date:
October 23, 1996
Filing Date:
November 14, 1990
Export Citation:
Assignee:
ASAHI CHEMICAL IND
International Classes:
H01L43/08; (IPC1-7): H01L43/08