Title:
【発明の名称】エピタキシャル成長化合物半導体結晶
Document Type and Number:
Japanese Patent JP2560562
Kind Code:
B2
Abstract:
on a substrate, e.g. a GaS or InP crystal wafer (21), are grown epitaxially and successively, e.g. in vapor deposition apparatus of Fig. 1, an optional undoped InAs or InP layer (20) 10 ANGSTROM to 1 mu thick, a buffer layer comprising: (A) a high-resistivity layer ( 19 ) of thickness 2, 000 ANGSTROM to 5 mu m of AlGaAs preferably of composition Al(0.1-0.8) Ga(0.9-0.2) As or AlGaInP which is doped with oxygen and/or transition metal in total amount of 1 x 10<1><7> to 1 x 10<2><0> atoms/cm<3>, and (B) a layer (18) of thickness 1, 000 to 20, 000 ANGSTROM of GaAs, InGaP or AlGas of high purity such that the total concentration of donor impurities, acceptor impurities and active defects is 1 x 10 <1><6> per cm<3> or less, and an active layer (17), e. g. of n-type GaAs or InGaP. Sources for the crystals can be vaporized trialkyl gallium or indium, arsine, hydrides of As and P; and as oxygen dopants O2 gas diluted with H2 or an inert gas or an aluminum or transition metal alkoxide provided the dopant has little residual effect. The layered compound semiconductor crystals provided are useful as high-speed electronic elements, especially in making a field-effect transistor (see Figs. 3 and 4) with little hysterisis or kink.
Inventors:
HATA MASAHIKO
FUKUHARA NOBORU
MAEDA NAOYOSHI
FUKUHARA NOBORU
MAEDA NAOYOSHI
Application Number:
JP9900691A
Publication Date:
December 04, 1996
Filing Date:
April 30, 1991
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO
International Classes:
H01L21/20; H01L21/205; H01L21/338; H01L29/205; H01L29/778; H01L29/812; (IPC1-7): H01L21/205; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP1223773A |
Attorney, Agent or Firm:
Mitsuhiro Moroishi (1 person outside)