Title:
【発明の名称】固体撮像装置とその製造方法
Document Type and Number:
Japanese Patent JP2575907
Kind Code:
B2
Abstract:
In a solid state image sensor device including photoelectric conversion elements and charge transfer devices, an impurity layer (21) constituting a surface layer formed on each of the charge storage layers (22) of the photoelectric convertion elements extends in the lateral direction of the semiconductor layer (9) so that, when viewed from stop, an end of the surface impurity layer coincides with an end of a transfer electrode (10) of each of the charge transfer devices and serves as an isolation layer, thereby obviating problems associated with the degradation of performance of the sensor device due to expansion of the isolation layer in thermal diffusion.
Inventors:
YAMADA TETSUO
Application Number:
JP33841289A
Publication Date:
January 29, 1997
Filing Date:
December 28, 1989
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L27/148; (IPC1-7): H01L27/148
Domestic Patent References:
| JP63142859A |
Attorney, Agent or Firm:
Takehiko Suzue (3 outside)