Title:
【発明の名称】半導体記憶装置およびその製造方法
Document Type and Number:
Japanese Patent JP2579253
Kind Code:
B2
Abstract:
PURPOSE:To ensure the sufficient area of a capacitor by a method wherein an electrode layer to be used as a lower-part electrode for the capacitor is connected to an impurity region situated between an element isolation region and a gate electrode and it is formed on a sidewall and a second insulating layer. CONSTITUTION:A conductive layer 8 is connected to an impurity region 3 situated between gate electrodes 5; it is formed on the gate electrodes 5 so as to be spread and extended via a first insulating layer 12. A second insulating layer 9 is formed on the conductive layer 8. Sidewalls 13, 14 are formed on sidewall parts of the gate electrodes 5, the conductive layer 8 and the second insulating layer 9. An electrode layer 6 to be used as a lower-part electrode for a capacitor is connected to the impurity region situated between an element isolation region 2 and the gate electrodes 5; it is formed on the sidewalls 13, 14 and the second insulating layer 9. Thereby, the surface area of the capacitor is increased in the same plane area as in conventional cases by utilizing the difference in level of the conductive layer, and it is possible to ensure the sufficient area of the capacitor.
Inventors:
TANAKA YOSHINORI
Application Number:
JP12142291A
Publication Date:
February 05, 1997
Filing Date:
May 27, 1991
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L27/108; H01L21/8242
Attorney, Agent or Firm:
Fukami Hisaro (3 outside)