Title:
【発明の名称】ショットキ障壁型赤外線イメージセンサ及びその製造方法
Document Type and Number:
Japanese Patent JP2596190
Kind Code:
B2
Abstract:
PURPOSE:To suppress flare when a high-temperature object is photographed and reduce the expansion of an image by making an isolation region, containing impurities at high densities, which electrically isolate each unit pixel run from the surface of a semiconductor substrate to the rear surface thereof. CONSTITUTION:An oxide film 17 formed on a p-type single crystal Si substrate 5 is cut in a pattern of an isolation region, and a groove 18 is formed. Next, boron is added into this groove 18 by a diffusion method. Thereafter, polycrystalline Si 20 containing boron at high densities is grown within the groove 18, and the groove 18 is filled with it. This forms a p<+>-type isolation region. Finally, after all components on the surface of the substrate required for a Schottky barrier type infrared-ray image sensor are completed, surface protection is made and the thickness of the image region portion is decreased from the rear surface of the substrate. The thickness of the substrate in that portion is made to the depth of the groove 18 or the portion 19 of the portion where boron is added. This causes the p+ type isolation region run from the surface of the substrate to the rear surface thereof.
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Inventors:
Toyama Shigeru
Application Number:
JP18201290A
Publication Date:
April 02, 1997
Filing Date:
July 10, 1990
Export Citation:
Assignee:
NEC
International Classes:
H04N5/33; H01L21/76; H01L21/761; H01L27/148; H04N5/335; H04N5/369; H04N5/3728; H04N5/374; (IPC1-7): H01L27/148; H01L21/761; H04N5/335
Domestic Patent References:
| JP5661177A | ||||
| JP1273364A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)