Title:
【発明の名称】半導体装置の製造方法
Document Type and Number:
Japanese Patent JP2626289
Kind Code:
B2
Abstract:
A semiconductor device having superior electrical characteristics is fabricated. 50 nm of the surface of a CZ (100) silicon substrate is oxidized to form an oxidized film. Afterwards a first ion implantation of boron ions is conducted to this silicon substrate amounting to 7x1013 cm-2 with acceleration energy of 1.5 MeV. Next, a first annealing in nitrogen ambient at 1050 DEG C. for 40 minutes is conducted. Through this ion implantation process a damaged layer and a dopant layer are formed within the silicon substrate. Boron ions are implanted as a second ion implantation, with a dosage of 7x1013 cm-2, followed by a second implanted annealing in nitrogen ambient at 1050 DEG C. for 40 minutes. Further, as a third ion implantation, boron ions are implanted with a dosage of 6x1013 cm-2 followed by a third annealing in nitrogen ambient at 1050 DEG C. for 40 minutes. In the dopant layer thus formed, through a plurality of repeated high energy ion implantation and subsequent annealing, in order to obtain the desired dopant concentration, density of secondary defect occurrences may be lowered.
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Inventors:
Norito Shimizu
Bunji Mizuno
Kameyama Shuichi
Bunji Mizuno
Kameyama Shuichi
Application Number:
JP5851091A
Publication Date:
July 02, 1997
Filing Date:
March 22, 1991
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/265; H01L21/322; H01L21/74; H01L21/8238; H01L27/092; (IPC1-7): H01L21/265; H01L21/322; H01L21/74; H01L21/8238; H01L27/092
Domestic Patent References:
| JP6392030A | ||||
| JP5447473A | ||||
| JP6226867A | ||||
| JP62200723A |
Attorney, Agent or Firm:
Tomoyuki Takimoto