Title:
【発明の名称】線形集積化抵抗
Document Type and Number:
Japanese Patent JP2628697
Kind Code:
B2
Abstract:
An integrated resistor is constituted by a doped resistance body in a semiconductor substrate which is coated with a layer of insulating material having local apertures in which metal end contacts (2a, 3a) and the tapping contacts (4a, 5a, 6a) are provided. The width of each tapping contact (4a, 5a, 6a) is smaller than the width of the doped zone and, viewed in the longitudinal direction of the resistance body, these tapping contacts (4a, 5a, 6a) do not overlap.
Inventors:
Robert Emile Johann van de Flift
Martine van der fen
Martine van der fen
Application Number:
JP16918388A
Publication Date:
July 09, 1997
Filing Date:
July 08, 1988
Export Citation:
Assignee:
Philips Electronics Nemrose Fennaught Shap
International Classes:
H01L27/04; H01L21/822; H01L27/08; H01L29/8605; H03H7/24; H03M1/00; H03M1/36; H03M1/76; (IPC1-7): H01L27/04; H01L21/822; H03H7/24; H03M1/36; H03M1/76
Domestic Patent References:
| JP5617052A | ||||
| JP59104159A | ||||
| JP62190845A |
Attorney, Agent or Firm:
Akihide Sugimura (1 outside)