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Title:
【発明の名称】半導体装置
Document Type and Number:
Japanese Patent JP2634272
Kind Code:
B2
Abstract:
PURPOSE:To enable increase of the capacity of a memory cell while maintaining the strength of a capacitor, by a method wherein the ratio between the height (h) and the outside diameter l of a third conductive layer forming a cylindrical or columnar capacitor is set to be h/l<10. CONSTITUTION:In a device having a capacitor for charge storage which is constructed of a second conductive layer 7, a third cylindrical or columnar conductive layer 17 being in contact at least with a part on the second conductive layer 7 and formed vertically to a substrate, a second insulating film 8 at least partially covering the second and third conductive layers except the surfaces thereof connecting with an impurity region 6, and a fourth conductive layer 9 formed at least on the second insulating film 8, a cylindrical capacitor is formed so that the ratio h/l of the height (h) and the outside diameter lof the third conductive layer is h/l>10. According to this constitution, a capacity sufficient for a soft error can be obtained and also the strength of the cylindrical or columnar capacitor can be maintained.

Inventors:
TANAKA YOSHINORI
Application Number:
JP1018890A
Publication Date:
July 23, 1997
Filing Date:
January 18, 1990
Export Citation:
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Assignee:
MITSUBISHI DENKI KK
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L27/108; H01L21/822; H01L21/8242; H01L27/04
Domestic Patent References:
JP61258467A
JP62286270A
JP2122560A
Attorney, Agent or Firm:
Kenichi Hayase