▲ＩＩＩ▼−▲Ｖ▼族化合物半導体装置の製造方法

Title:

▲ＩＩＩ▼−▲Ｖ▼族化合物半導体装置の製造方法

Document Type and Number:

Japanese Patent JP2659721

Kind Code:

B2

Inventors:

YAMAZAKI KIMYOSHI
HIUGA FUMIAKI
SUGITANI SUEHIRO
ENOKI TAKATOMO

Application Number:

JP23019287A

Publication Date:

September 30, 1997

Filing Date:

September 14, 1987

Export Citation:

Assignee:

NIPPON DENSHIN DENWA KK

International Classes:

H01L21/324; H01L21/265; H01L21/338; H01L29/80; H01L29/812; (IPC1-7): H01L21/265; H01L21/324; H01L21/338; H01L29/812

Domestic Patent References:

JPS60206075A
JPS60254673A

Attorney, Agent or Firm:

秋田収喜

Previous Patent: 排ガス熱交換装置

Next Patent: モノマー混合物から成形材料を製造する方法