Title:
【発明の名称】半導体素子のシリコン絶縁膜形成方法
Document Type and Number:
Japanese Patent JP2665316
Kind Code:
B2
Abstract:
The present invention provides a method of forming an insulating layer of a semiconductor device, in which an oxide layer having an optimum nitrogen concentration and also a sufficient thickness may be grown by independently regulating the flow rate of NO and O2 gas and supplying the NO and O2 gas to a reaction chamber. This method is such that the NO and O2 gas is supplied to the chamber by regulating the NO and O2 gas, while maintaining the inside of the chamber at a temperature of about 750 DEG C. to 1050 DEG C. for a predetermined time, wherein nitrogen is included in a Si/SiO2 interface.
Inventors:
Hyunsang Hawang
Application Number:
JP17835094A
Publication Date:
October 22, 1997
Filing Date:
July 29, 1994
Export Citation:
Assignee:
Ergi Semicon Company Limited
International Classes:
H01L21/318; H01L21/28; H01L21/31; H01L21/314; H01L21/316; H01L21/822; H01L21/8247; H01L27/04; H01L29/51; H01L29/788; H01L29/792; (IPC1-7): H01L21/318; H01L21/822; H01L21/8247; H01L27/04; H01L29/788; H01L29/792
Domestic Patent References:
| JP4166799A | ||||
| JP4245636A | ||||
| JP6435954A | ||||
| JP5198574A |
Attorney, Agent or Firm:
Junnosuke Nakamura (1 outside)