Title:
【発明の名称】半導体基板、半導体基板と半導体装置の製造方法、並びに半導体基板の検査・評価方法
Document Type and Number:
Japanese Patent JP2680482
Kind Code:
B2
Abstract:
There are provided a method of inspecting and evaluating semiconductor substrates, good quality semiconductor substrates, a method of manufacturing good quality semiconductor substrates, and a method of manufacturing semiconductor devices using good quality semiconductor substrates. A semiconductor substrate (1) is processed with aqueous basic solution. In this process, the substrate (1) is dipped in the aqueous solution or exposed to a vapor of the aqueous solution. With this process, the surface of the substrate (1) is selectively etched. The substrate surface after the etching process is radiated with a laser beam to measure a light scattered point density. The quality of the substrate (1) can be judged in accordance with the measured density. A thermal treatment may be carried out before or after processing the substrate with the aqueous basic solution. The thermal treatment considerably changes the fine defect density on the surface of the substrate (1). In accordance with such a change, the quality of the substrate (1) may be judged. If a substrate (1) judged as having a good quality is used, a semiconductor device having a good quality substrate can be obtained.
Inventors:
Miyashita Moriya
Hiratsuka Hachiro
Shuichi Samata
Kubota Atsuko
Masanori Numano
Hiroyuki Fukui
Hiratsuka Hachiro
Shuichi Samata
Kubota Atsuko
Masanori Numano
Hiroyuki Fukui
Application Number:
JP6210091A
Publication Date:
November 19, 1997
Filing Date:
March 26, 1991
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/66; G01N1/28; G01N21/84; G01N21/95; H01L21/306; (IPC1-7): H01L21/66; G01N1/28; G01N21/84; H01L21/306
Domestic Patent References:
| JP5618437A | ||||
| JP63215041A | ||||
| JP57178135A | ||||
| JP56103438A | ||||
| JP2239642A | ||||
| JP4745272A | ||||
| JP2130848A | ||||
| JP60233824A | ||||
| JP4627639B1 |
Attorney, Agent or Firm:
Kazuo Sato (3 others)