Title:
【発明の名称】イオン注入装置の帯電解消方法
Document Type and Number:
Japanese Patent JP2695016
Kind Code:
B2
Abstract:
Disclosed is a method of removing electric charges (28) accumulated on a semiconductor substrate (21) in ion implantation by irradiating a highly accelerated electron beam (15) with acceleration energy of 1 to 50 KeV into the portion irradiated with ion beams (11) when impurity layer is formed by implanting the ion beams (11) in the semiconductor substrate (21).
Inventors:
Kichi Yukimasa Ta
Okumura Katsuya
Okumura Katsuya
Application Number:
JP27601289A
Publication Date:
December 24, 1997
Filing Date:
October 25, 1989
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01J37/02; H01J37/317; H01L21/265; (IPC1-7): H01J37/317
Domestic Patent References:
| JP6430155A | ||||
| JP1122557A | ||||
| JP62154544A |
Attorney, Agent or Firm:
Hidekazu Miyoshi (1 outside)