Title:
【発明の名称】タングステン膜の成膜装置
Document Type and Number:
Japanese Patent JP2730695
Kind Code:
B2
Abstract:
The device has a film-forming chamber, means for introducing a WF6 gas into the film-forming chamber, and means for introducing a H2 gas into the film-forming chamber. At least a portion that comes in contact with the WF6 gas in the film-forming chamber is composed of a metal material that has on the surface thereof a fluoride-containing passivation film composed chiefly of a metal fluoride that nearly satisfies the stoichiometric ratio. The tungsten film of high quality can be formed even at low substrate temperatures.
Inventors:
OOMI TADAHIRO
MIKI MASAHIRO
MAENO MATAGORO
KIKUYAMA HIROHISA
MIKI MASAHIRO
MAENO MATAGORO
KIKUYAMA HIROHISA
Application Number:
JP9022689A
Publication Date:
March 25, 1998
Filing Date:
April 10, 1989
Export Citation:
Assignee:
OOMI TADAHIRO
SUTERA KEMIFUA KK
SUTERA KEMIFUA KK
International Classes:
C23C16/02; C23C16/14; C23C16/44; H01L21/28; H01L21/285; (IPC1-7): C23C16/14; C23C16/44; H01L21/285
Attorney, Agent or Firm:
Fukumori Hisao