Title:
【発明の名称】不揮発性半導体記憶装置の書込み・消去方法
Document Type and Number:
Japanese Patent JP2806326
Kind Code:
B2
Abstract:
In a nonvolatile semiconductor memory device, a nonvolatile counter is provided to store a number of erasing operations. A time period of a writing operation upon a memory cell is changed in accordance with the number of erasing operations. Also, a time period of an erasing operation upon memory cells is changed in accordance with the number of erasing operations.
Inventors:
Toshiya Sato
Application Number:
JP27488695A
Publication Date:
September 30, 1998
Filing Date:
September 27, 1995
Export Citation:
Assignee:
NEC
International Classes:
G11C17/00; G11C16/02; G11C16/32; G11C16/34; H01L21/8247; H01L27/115; (IPC1-7): G11C16/02; H01L27/115
Domestic Patent References:
| JP668688A | ||||
| JP581881A | ||||
| JP737395A | ||||
| JP3250496A | ||||
| JP6131885A | ||||
| JP668686A |
Attorney, Agent or Firm:
Asato Kato