Title:
【発明の名称】半導体素子のゲート電極の形成方法
Document Type and Number:
Japanese Patent JP2810636
Kind Code:
B2
Abstract:
A method for forming a gate electrode in a semiconductor device is disclosed. An injection of the holes which moved from the control gate to a dielectric layer is suppressed since the control gate electrode is formed with a double layer structure composed of polysilicon-germanium and polysilicon. Accordingly, the data retention time is increased by increasing the energy barrier for a hole.
Inventors:
Zhao Zhen
Application Number:
JP12094295A
Publication Date:
October 15, 1998
Filing Date:
May 19, 1995
Export Citation:
Assignee:
Hyundai Electronics Industry Co., Ltd.
International Classes:
H01L29/43; H01L21/316; H01L21/318; H01L21/8247; H01L27/115; H01L29/423; H01L29/49; H01L29/78; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L21/316; H01L21/318; H01L27/115; H01L29/43; H01L29/788; H01L29/792
Domestic Patent References:
| JP1189966A | ||||
| JP5226663A |
Attorney, Agent or Firm:
Shukichi Nakagawa (1 person outside)