Title:
【発明の名称】配列型赤外線検知器の製造方法
Document Type and Number:
Japanese Patent JP2817435
Kind Code:
B2
Abstract:
PURPOSE:To obtain a sensor which simultaneously satisfies high sensitivity due to a reduction in a dark current and high resolution due to multiple pixels in an array type infrared ray sensor. CONSTITUTION:An n<+> type HgCdTe ion implanted region 4 is formed on a p-type HgCdTe layer 2 by ion implanting, pixels are separated by mesa etching, and an n<-> type HgCdTe diffused region 3 is formed by heat treating. Since a p-n junction position of a photodiode 5 is moved to a region which is not damaged by the ion implantation, a dark current due to a recombination caused by a crystal defect is very small, and a high sensitivity photodiode is obtained. Further, since a mesa type structure is formed and lateral diffusion of the p-n junction by heat treating is suppressed, a pitch between the photodiodes can be reduced, and an array type infrared ray sensor having high resolution is obtained.
Inventors:
Amizawa Akira
Application Number:
JP8532391A
Publication Date:
October 30, 1998
Filing Date:
April 17, 1991
Export Citation:
Assignee:
NEC
International Classes:
H01L31/0264; H01L31/10; (IPC1-7): H01L31/0264
Domestic Patent References:
| JP61268075A | ||||
| JP5378190A | ||||
| JP60136273A | ||||
| JP6423567A | ||||
| JP6213085A | ||||
| JP59112652A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)