【発明の名称】シリコン単結晶の製造方法

Title:

【発明の名称】シリコン単結晶の製造方法

Document Type and Number:

Japanese Patent JP2822904

Kind Code:

B2

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Inventors:

Murai Toshinari
Eiichi Iino
Hideo Arai
Fusegawa Izumi
Hiroshi Yamagishi

Application Number:

JP31979194A

Publication Date:

November 11, 1998

Filing Date:

December 22, 1994

Export Citation:

Assignee:

Shin-Etsu Semiconductor Co., Ltd.

International Classes:

C30B15/00; C30B15/22; C30B29/06; H01L21/208; (IPC1-7): C30B15/00; C30B15/22; C30B29/06

Domestic Patent References:

Attorney, Agent or Firm:

Ryoichi Yamamoto (1 person outside)

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