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Title:
【発明の名称】半導体レーザ装置及びその製造方法
Document Type and Number:
Japanese Patent JP2827919
Kind Code:
B2
Abstract:
A semiconductor laser includes a compound semiconductor substrate of a first conductivity type; successively disposed on said semiconductor substrate, a first conductivity type lower cladding layer, an active layer including a multiple quantum well structure, first and second upper cladding layers of a second conductivity type opposite the first conductivity type, and a first contacting layer of the second conductivity type in electrical contact with the second upper cladding layer; first and second electrodes in electrical contact with the semiconductor substrate and the first contacting layer, respectively, the semiconductor laser including opposed facets transverse to the lower cladding and the first and second upper cladding layers, the second upper cladding layer having a ridge shape that extends between the facets of the semiconductor laser and is centrally disposed on the first upper cladding layer; a first conductivity type current blocking layer disposed on and between the first upper cladding layer and the first contacting layer, contacting opposite sides of the ridge, and extending between the facets; and a window structure contiguous with each of the facets, each window structure comprising a region including a dopant impurity, each region being disposed within parts of the lower cladding layer, the active layer, and the first upper cladding layer opposite the ridge but not extending substantially into the second upper cladding layer, the multiple quantum well structure of the active layer being disordered in each window region.

Inventors:
NAGAI YUTAKA
SHIMA AKIHIRO
Application Number:
JP24561594A
Publication Date:
November 25, 1998
Filing Date:
October 11, 1994
Export Citation:
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Assignee:
MITSUBISHI DENKI KK
International Classes:
H01S5/00; H01S5/20; H01S5/223; H01S5/34; H01S5/343; (IPC1-7): H01S3/18
Domestic Patent References:
JP3208388A
JP2154492A
JP7249827A
JP7221386A
JP629621A
JP1132189A
Other References:
【文献】1995年(平成7年)秋季第56回応用物理学会学術講演会予稿集第3分冊29p-ZB-6 p.1130
Attorney, Agent or Firm:
Kaneo Miyata (2 outside)