Title:
【発明の名称】非単結晶シリコン半導体
Document Type and Number:
Japanese Patent JP2835798
Kind Code:
B2
Abstract:
PURPOSE:To provide a non-single crystal silicon semiconductor film wherein doping efficiency is excellent, impurities are hard to diffuse, and electrons are easy to move, by making the average radius and concentration of microvoids existing in the semiconductor film lower than or equal to 3.5Angstrom and 1X10<19>(cm<-3>), respectively. CONSTITUTION:For example, in the case of light acceptor for electrophotography, acceptor 104 for electrophotography is constituted by laminating a charge injection preventive layer 102 and a photoconductive layer 103 on a retainer 101. Microcrystal silicon semiconductor and polycrystalline silicon semiconductor out of non-single crystal silicon semiconductor are especially suitable to the charge injection preventive layer 102. Amorphous silicon semiconductor out of non-single crystal silicon semiconductor is especially suitable to the photoconductive layer 103. The average radius of microvoids contained in the semiconductor is made smaller than or equal to 3.5Angstrom , and the density of the microvoids is made lower than or equal to 1X10<19>(cm<-3>). Thereby the flatness of the interface and the surface is improved, the stress of the interface is reduced, and the doping efficiency of impurities is improved.
Inventors:
SAITO KEISHI
KARYA TOSHIMITSU
AOIKE TATSUYUKI
KODA JUZO
NIWA MITSUYUKI
KARYA TOSHIMITSU
AOIKE TATSUYUKI
KODA JUZO
NIWA MITSUYUKI
Application Number:
JP11984492A
Publication Date:
December 14, 1998
Filing Date:
April 15, 1992
Export Citation:
Assignee:
KYANON KK
International Classes:
C23C16/24; H01L21/20; H01L21/336; H01L29/78; H01L29/786; H01L31/04; H01L31/10; (IPC1-7): H01L21/20; C23C16/24; H01L21/336; H01L29/786; H01L31/04; H01L31/10
Domestic Patent References:
| JP4268721A | ||||
| JP4249376A | ||||
| JP4249377A |
Attorney, Agent or Firm:
Toyoki Ogigami