Title:
【発明の名称】回路内蔵受光素子
Document Type and Number:
Japanese Patent JP2839413
Kind Code:
B2
Abstract:
PURPOSE:To obtain a highly sensitive high response light receiving element incorporating circuitry by growing a P-type epitaxial layer having high specific resistance in place of a first N-type epitaxial layer having high specific resistance. CONSTITUTION:A first N<+>-type buried diffusion layer 2 is formed in a region for forming a photodiode whereas a P-type buried diffusion layer 4 is formed in a region for forming a signal processing circuit on a P-type semiconductor substrate 1. A first P-type epitaxial layer 3 having high specific resistance is then laminated thereon. Since a P-type epitaxial layer is formed on a photodiode, P-type inverted layer is not produced upon production of some extent of lateral auto-dope from the P-type buried diffusion layer 4, resulting in a highly sensitive high response light receiving element incorporating circuitry wherein migration rate of optical carrier is high.
Inventors:
YAMAMOTO MOTOHIKO
KUBO MASARU
KUBO MASARU
Application Number:
JP20681992A
Publication Date:
December 16, 1998
Filing Date:
August 03, 1992
Export Citation:
Assignee:
SHAAPU KK
International Classes:
H01L21/74; H01L27/14; H01L31/10; (IPC1-7): H01L27/14; H01L21/74; H01L31/10
Attorney, Agent or Firm:
Fukami Hisaro