Title:
【発明の名称】誘電体へテロ超低抵抗膜
Document Type and Number:
Japanese Patent JP2884357
Kind Code:
B2
Abstract:
A dielectric ultra-low resistivity heterofilm has a structure in which a LB (Langmuir Blodgett) heterofilm (4) composed of polarized dielectric film (4-a) of a Z-type or A-type and non-polarized dielectric film (4-b) of a Y-type are stacked on one another. The LB heterofilm (4) is sandwiched between conductive films (3,5) such as aluminium or gold films, so that the resistivity of the film in the direction of the film surface thereof becomes considerably lower than that of metal films.
Inventors:
HINO TARO
Application Number:
JP29956389A
Publication Date:
April 19, 1999
Filing Date:
November 20, 1989
Export Citation:
Assignee:
HINO TARO
International Classes:
H01L51/05; H01B1/00; H01B5/00; H01C7/02; H01C7/10; H01L51/30; (IPC1-7): H01L51/00; H01B5/00