Title:
【発明の名称】薄膜パターン形成法
Document Type and Number:
Japanese Patent JP2888741
Kind Code:
B2
Abstract:
The present invention provides a method for forming a thin film pattern having an excellent accuracy of pattern. The method comprises the steps of: (a) exposing a polysilane layer formed from a polysilane having a structure of the formula: wherein R1, R2, R3 and R4 indicate a group which is independently selected from the group consisting of a substituted or non-substituted aliphatic hydrocarbon residue, an alicyclic hydrocarbon residue and an aromatic hydrocarbon residue and m and n indicate an integer, provided on a substrate, to ultraviolet light selectively to form a latent image of the thin film pattern; and (b) dipping the polysilane layer in which the latent image of the thin film pattern was formed in a metal oxide sol and then drying.
Inventors:
TSUSHIMA HIROSHI
SUMYOSHI IWAO
YOKOYAMA MASAAKI
SUMYOSHI IWAO
YOKOYAMA MASAAKI
Application Number:
JP23967193A
Publication Date:
May 10, 1999
Filing Date:
September 27, 1993
Export Citation:
Assignee:
NIPPON PEINTO KK
International Classes:
G03F7/075; G03F7/26; G03F7/30; G03F7/36; G03F7/38; (IPC1-7): G03F7/38; G03F7/075; G03F7/30; G03F7/36
Domestic Patent References:
| JP5188215A | ||||
| JP5273410A |
Attorney, Agent or Firm:
Aoyama Ryo (2 outside people)