Title:
【発明の名称】半導体不揮発性メモリ
Document Type and Number:
Japanese Patent JP2918098
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To avoid the fluctuation in the threshold value voltage of a transistor by avoiding the diffusion of a heavy metal comprising a ferroelectric material in the active region of a cell transistor. SOLUTION: A cell transistor is composed of a word line 1 (gate electrode) and n<+> type diffused layers 6 on a p type silicon substrate 9. Besides, one of the n<+> type diffused layers 6 is connected to a bit line 3 while the other one is connected to a plate line 2 through the intermediary of a high dielectric capacitor elements (upper part electrode 4, a ferroelectic film 8) (the plate line 2 serves as the lower part electrode of the ferroelectric capaciter element). In such a constitution, the bit line 3 is spread so as to cover the channel of transistor, thereby enabling the diffusion of the heavy metal in the channel region to be avoided.
Inventors:
MAEJIMA YUKIHIKO
Application Number:
JP7355196A
Publication Date:
July 12, 1999
Filing Date:
March 28, 1996
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
G11C14/00; G11C11/22; H01L21/8242; H01L21/8246; H01L21/8247; H01L27/10; H01L27/105; H01L27/108; H01L29/788; H01L29/792; (IPC1-7): H01L27/10; G11C11/22; G11C14/00; H01L21/8242; H01L21/8247; H01L27/108; H01L29/788; H01L29/792
Domestic Patent References:
| JP7202138A | ||||
| JP855484A | ||||
| JP963281A | ||||
| JP9139472A |
Attorney, Agent or Firm:
Yusuke Omi