Title:
【発明の名称】半導体装置
Document Type and Number:
Japanese Patent JP2918100
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent flow of a leakage current by forming an inversion layer by residual dielectric polarization of ferroelectrics in a non-volatile memory using a multilayer body of a ferroelectric film and a conductor film as a wiring. SOLUTION: First, second and third n-wells 6, 7 and 8 are formed on a p-type semiconductor substrate. The n-wells 6 and 7 are constantly maintained at the same voltage, while the n-well 8 is not always maintained at the same electric potential as the other wells. A lower electrode 1, a CeO2 film 2 as a buffer layer, a PT film 3 as ferroelectrics, and a conductor film 4 are formed on the substrate via a silicon oxide film 9, and a ferroelectric capacitance element and a wiring having a ferroelectric film are formed. In the case where the wiring is extended over the wells of different electric potentials, the wiring having the ferroelectric film is terminated before such wells, and wiring is performed using an Al wiring 11 as a single-layer conductive film.
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Inventors:
KATO ARIMITSU
Application Number:
JP13612896A
Publication Date:
July 12, 1999
Filing Date:
May 30, 1996
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
H01L27/112; H01L21/8246; H01L27/105; (IPC1-7): H01L21/8246; H01L27/112
Domestic Patent References:
| JP8186234A | ||||
| JP8180671A | ||||
| JP8172168A |
Attorney, Agent or Firm:
Yusuke Omi