Title:
【発明の名称】非常に高利得のヘテロ接合バイポーラトランジスタを製造する方法
Document Type and Number:
Japanese Patent JP2937944
Kind Code:
B2
Abstract:
A heterojunction bipolar transistor with a vertically integrated profile includes a substrate layer, a collector contact layer, a collector layer, a base layer and an emitter layer, formed from AlGaAs, etched to form an emitter mesa leaving a relatively thin passivating layer, adjacent the emitter mesa. The base metal contacts are formed on the passivating layer, resulting in a wider bandgap, thus minimizing surface recombination velocity at the emitter-base junction and increasing the overall gain ( beta ) of the device. The base metal contacts are formed by evaporating a p-ohmic metal onto the n-type passivation layer. The p-ohmic contacts are annealed, resulting in p-type metal diffusion through the passivating layer and reaction with the base layer, resulting in ohmic contacts.
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Inventors:
AARON KEI OKI
DOWAITO SHII SUTORAITO
DONARUDO KEI UMEMOTO
RIIMU TEII TORAN
DOWAITO SHII SUTORAITO
DONARUDO KEI UMEMOTO
RIIMU TEII TORAN
Application Number:
JP12198497A
Publication Date:
August 23, 1999
Filing Date:
May 13, 1997
Export Citation:
Assignee:
TEII AARU DABURYUU INC
International Classes:
H01L29/73; H01L21/331; H01L29/205; H01L29/737; (IPC1-7): H01L21/331; H01L29/205; H01L29/73
Attorney, Agent or Firm:
Minoru Nakamura (6 outside)