Title:
【発明の名称】窒化ガリウム系化合物半導体の結晶成長方法
Document Type and Number:
Japanese Patent JP2956489
Kind Code:
B2
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Inventors:
NAKAMURA SHUJI
Application Number:
JP22767994A
Publication Date:
October 04, 1999
Filing Date:
September 22, 1994
Export Citation:
Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
H01L33/12; H01L33/32; H01L33/34; H01S5/00; H01S5/323; (IPC1-7): H01L33/00; H01S3/18
Domestic Patent References:
| JP5335622A | ||||
| JP653549A | ||||
| JP5110139A | ||||
| JP62119940A | ||||
| JP541541A |
Other References:
【文献】第54回応用物理学会学術講演会予稿集 第1分冊 30p-Zs-2 p.322