Title:
【発明の名称】半導体ダイオードの製造方法並びに半導体発光ダイオード並びに光電池
Document Type and Number:
Japanese Patent JP2963735
Kind Code:
B2
Abstract:
The invention provides a method of producing a semiconductor diode, which can be a light emitting diode or a photovoltaic cell. A p-type diamond substrate which can be a crystal (10) or a crystalline or polycrystalline film (26) is implanted with ions, preferably at a low temperature, to create a vacancy and interstitial-rich implanted region. The implanted region defines a p-n junction with the substrate. Respective electrical contacts (14, 16; 28, 32) are applied to the implanted region and to the substrate. LED's produced by the method emit blue light, which is useful in telecommunications systems. Photovoltaic cells with a diameter of 50 to 75 mm can also be created.
Inventors:
YOHAN FURANZU PURINZU
Application Number:
JP18695190A
Publication Date:
October 18, 1999
Filing Date:
July 13, 1990
Export Citation:
Assignee:
DE BIAZU IND DAIAMONDO DEIBIJON LTD
International Classes:
H01L31/028; H01L31/04; H01L31/10; H01L31/18; H01L33/00; H01L33/34; (IPC1-7): H01L33/00; H01L31/04
Domestic Patent References:
| JP36872A | ||||
| JP6068664A | ||||
| JP38378A |
Other References:
Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．Ｖｏｌ．４１，Ｎｏ．１０，ｐｐ．９５０−９５２
Attorney, Agent or Firm:
Akira Asamura (3 outside)