Title:
【発明の名称】III/V族化合物半導体のドライエッチング方法
Document Type and Number:
Japanese Patent JP2976530
Kind Code:
B2
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Inventors:
YOSHIKAWA TAKASHI
Application Number:
JP41693290A
Publication Date:
November 10, 1999
Filing Date:
December 28, 1990
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065
Domestic Patent References:
| JP234922A | ||||
| JP2197124A |
Attorney, Agent or Firm:
Nobuo Takahashi (3 outside)