Title:
【発明の名称】マイクロ波プラズマCVD法による堆積膜形成装置
Document Type and Number:
Japanese Patent JP2994652
Kind Code:
B2
Abstract:
In a microwave plasma chemical vapor deposition apparatus which comprises a substantially enclosed deposition chamber, a means for supporting a substrate on which a functional deposited film is to be formed, a means for supplying raw material gases, a means for evacuating the inside of said deposition chamber and a means for generating microwave discharge plasmas in said deposition chamber which includes a waveguide extending from a microwave power source and a microwave introducing window through which a microwave energy is to be introduced into said deposition chamber, the improvement characterized in that said apparatus is provided with a holding member capable of holding said microwave introducing window and said substrate and capable of sealing said deposition chamber in a air-tight state upon film-formation and said apparatus is provided with a means for transporting said holding member under vacuum condition.
Inventors:
Teruo Triangle
Yamamura Masateru
Kato Minoru
Yamamura Masateru
Kato Minoru
Application Number:
JP1499689A
Publication Date:
December 27, 1999
Filing Date:
January 26, 1989
Export Citation:
Assignee:
Canon Inc
International Classes:
C23C16/50; C23C16/458; C23C16/511; H01J37/32; H01L21/00; H01L21/205; (IPC1-7): C23C16/50; H01L21/205
Domestic Patent References:
| JP62219524A | ||||
| JP60186849A |
Attorney, Agent or Firm:
Toyoki Ogigami