Title:
【発明の名称】半導体シリコンウェーハ並びにその製造方法と熱処理装置
Document Type and Number:
Japanese Patent JP3011178
Kind Code:
B2
Abstract:
An object of the present invention is to provide a single-crystal silicon wafer where octahedral voids of Grown-in defects, which are the generation source of COP on the surface and COP at several mu m depth of the surface layer of the single-crystal silicon wafer grown by the CZ method, are effectively eliminated, and a fabrication method of this wafer, where oxygen near the surface is out-diffused by annealing in a hydrogen and/or inactive gas ambient and oxide film on the inner walls of the octahedral voids near the surface are removed by the created unsaturated oxygen area, then oxidation annealing is performed in an oxygen ambient or mixed gas ambient of oxygen and inactive gas, so that interstitial silicon atoms are forcibly injected to completely eliminate the octahedral voids near the surface, and at the same time an IG layer is created in the bulk of the wafer.
Inventors:
Hisashi Adachi
Masakazu Sano
Shinsuke Sadamitsu
Takeshi Kubota
Masakazu Sano
Shinsuke Sadamitsu
Takeshi Kubota
Application Number:
JP10005298A
Publication Date:
February 21, 2000
Filing Date:
March 27, 1998
Export Citation:
Assignee:
SUMITOMO METAL INDUSTRIES,LTD.
International Classes:
H01L21/31; C30B33/02; H01L21/02; H01L21/316; H01L21/322; H01L21/324; (IPC1-7): H01L21/02; C30B33/02; H01L21/322; H01L21/324
Domestic Patent References:
| JP9260619A | ||||
| JP57201032A |
Attorney, Agent or Firm:
Yoshihisa Oshida