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Title:
【発明の名称】半導体装置
Document Type and Number:
Japanese Patent JP3014006
Kind Code:
B2
Abstract:
PURPOSE:To enable a positive electrode and a negative electrode to be created on the same plane and a light-receiving element to be highly efficient by laminating a first conductive type carrier supply layer and a light-absorbing layer on a substrate in sequence and then forming an electrode region with a second conductive type large and small areas on them. CONSTITUTION:A carrier supply layer 3 with a wide band gap and a first conductive type impurities density and a light-absorption layer 4 with a narrow band gap and a low impurities density where a large part of a thickness can easily result in depletion are formed on a substrate and then at least two electrode regions 6 and 7 with a second conductive type impurities density and large and small areas are formed on it. A region below the large-area electrode region is biased in backward direction and that below a small-area electrode region is biased in forward direction. At this time, a two-dimensional carrier gas 10 is formed near an interface between the light- absorption layer 4 and a carrier supply layer 3 and a carrier gas is drawn below an electrode where a forward bias is applied to, thus forming a connection with a low resistance in reference to the electrode. Therefore, p-side and n-side electrodes are connected to both edges of a region where a depletion layer is developed at a low resistance, thus achieving a high response.

Inventors:
Masao Makiuchi
Application Number:
JP34015190A
Publication Date:
February 28, 2000
Filing Date:
November 30, 1990
Export Citation:
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Assignee:
富士通株式会社
International Classes:
H01L27/14; H01L31/10; (IPC1-7): H01L31/10; H01L27/14
Domestic Patent References:
JP63120477A
JP2170580A
JP62194684A
JP6296864U
Attorney, Agent or Firm:
Keishiro Takahashi



 
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