Title:
【発明の名称】受光装置
Document Type and Number:
Japanese Patent JP3024188
Kind Code:
B2
Abstract:
PURPOSE:To obtain an inexpensive photodetective element which is easily formed into a monolithical IC by a method wherein a first terminal connected to a diffusion layer, a second terminal connected to a substrate, and a third terminal connected to an epitaxial layer are provided. CONSTITUTION:In a photodetective element, an N-type epitaxial layer 2 is provided onto a P-type substrate 1, the epitaxial layer 2 is separately divided for each element, and a first PN junction plane 3 is formed. A P-type diffusion layer 4 is provided to the epitaxial layer 2, and a second PN junction plane is formed with the P-type diffusion layer 4 and the N-type epitaxial layer 2. Then, a transparent protective film 6 is provided so as to cover the upside of the substrate 1 where the epitaxial layer 2 and the diffusion layer 4 have been formed, windows are provided to prescribed positions through etching, and electrodes 7, 8, and 9 are provided to the positions concerned. The electrode 7 is connected to the diffusion layer 4 and a first terminal A is led outside, the electrode 8 is connected to the substrate 1 and a second terminal B is taken outside, and the electrode 9 is connected to the epitaxial layer 2 and a third electrode C is led outside. In result, a photodetective element which is easily formed into a monolithical IC with low cost can be obtained.
Inventors:
Kazuo Miyauchi
Kenichi Ohkubo
Yoshitaka Natsume
Bandai Kohei
Misako Sugimoto
Kenichi Ohkubo
Yoshitaka Natsume
Bandai Kohei
Misako Sugimoto
Application Number:
JP25135290A
Publication Date:
March 21, 2000
Filing Date:
September 20, 1990
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
| JP55107274A | ||||
| JP63216372A | ||||
| JP63213972A | ||||
| JP6315479A | ||||
| JP60241277A | ||||
| JP2121421A |
Attorney, Agent or Firm:
Hidemori Matsukuma