Title:
【発明の名称】ヘテロ接合型電界効果トランジスタ
Document Type and Number:
Japanese Patent JP3058262
Kind Code:
B2
Abstract:
A hetero junction type field effect transistor can control a short channel effect, reduce the fluctuation of a threshold, and improve a yield. The hetero junction type field effect transistor comprises: a semiconductor substrate, a first electron feed layer made of a doped semiconductor having a wider band gap than the channel layer, a channel layer made of a non-doped semiconductor, a second electron feed layer comprising a laminate structure of a plurality of semiconductor layers having a wider band gap than the channel layer and having a thickness of 100 ANGSTROM or less, and a gate electrode, a source electrode, and a drain electrode.
Inventors:
Takaki Niwa
Application Number:
JP17847197A
Publication Date:
July 04, 2000
Filing Date:
July 03, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L29/812; H01L21/338; H01L29/10; H01L29/772; H01L29/778; (IPC1-7): H01L29/778; H01L21/338; H01L29/812
Domestic Patent References:
| JP574815A | ||||
| JP5218096A | ||||
| JP2178935A | ||||
| JP1056168A |
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)