Title:
【発明の名称】半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3067433
Kind Code:
B2
Abstract:
A method of manufacturing a semiconductor device having a titanium silicide layer comprises the steps of forming a silicon layer (106) on a titanium layer (104), washing a surface of the silicon layer (106), and heat treating the titanium layer (104) after washing to make the titanium layer a titanium silicide (105).
Inventors:
Tetsuro Asaba
Application Number:
JP35020792A
Publication Date:
July 17, 2000
Filing Date:
December 04, 1992
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L21/28; H01L21/283; H01L21/205; H01L21/3205; H01L21/336; H01L23/52; H01L29/78; (IPC1-7): H01L21/28; H01L21/3205
Domestic Patent References:
| JP61230373A | ||||
| JP63299377A | ||||
| JP39530A | ||||
| JP4137622A | ||||
| JP3155641A | ||||
| JP62239576A | ||||
| JP61271828A |
Other References:
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Ｊｏｕｒｎａｌ ｏｆ Ｍａｔｅｒｉａｌｓ Ｓｃｉｅｎｃｅ，Ｖｏｌ．２５（１９９０）ｐ．９８−１０２
Ｊｏｕｒｎａｌ ｏｆ Ｍａｔｅｒｉａｌｓ Ｓｃｉｅｎｃｅ，Ｖｏｌ．２５（１９９０）ｐ．９８−１０２
Attorney, Agent or Firm:
Johei Yamashita